RF devices R&D
RF devices R&D
Development of ultra-fast transistors (HEMT, HBT) for RF devices based on compound materials such as InP and GaAs.
Manufacturing services for single transistor devices and MMIC.
Capability of implementing ultra-high frequencies and ultra-low noise, making them suitable for research and development areas for 6G infrastructure and non-communication fields such as tera-hertz imaging.
The QSI research team researches and develops technological solutions and provides services as follows.
1
p-HEMT
100㎚ E-mode pHEMT
2
p-HEMT
80㎚ E-mode pHEMT
3
InGaAs HBT (TBD)
500㎚ HBT
